Gate-controlled amplifiable ultraviolet AlGaN/GaN high-electron-mobility phototransistor

Gate capacitances of high electron mobility transistors

The gate-drain capacitance and the sourcedrain capacitance of High Electron Mobility transistors have been measured on a computer-aided measurement system. The variation of these capacitances with transistor bias voltages is explained and compared with the trend predicted by a capacitance model used in literature. Differences in measured and calculated results arise from the assumptions used in...

Under-gate defect formation in Ni-gate AlGaN/GaN high electron mobility transistors

AlGaN/GaN high electron mobility transistors (HEMTs) represent a rapidly maturing technology plagued by reliability issues which are not well understood. One such issue is the relationship between gate leakage and the formation of reaction-based defects at the interface between the gate metal and the underlying epitaxial semiconductor layers. Here, the combination of chemical etching-based depr...

Electron mobility in double gate silicon on insulator transistors: Symmetric-gate versus asymmetric-gate configuration

We have studied electron mobility behavior in asymmetric double-gate silicon on insulator ~DGSOI! inversion layers, and compared it to the mobility in symmetric double-gate silicon on insulator devices, where volume inversion has previously been shown to play a very important role, being responsible for the enhancement of the electron mobility. Poisson’s and Schroedinger’s equations have been s...

Helicity sensitive terahertz radiation detection by dual-grating-gate high electron mobility transistors

Impact of gate placement on RF power degradation in GaN high electron mobility transistors

We have investigated the RF power degradation of GaN high electron mobility transistors (HEMTs) with different gate placement in the source–drain gap. We found that devices with a centered gate show different degradation behavior from those with the gate placed closer to the source. In particular, centered gate devices degraded through a mechanism that has a similar signature as that responsibl...